All the part names for which the file 093xjid05p75u4p9p48t74qkwy. The 6p15 is the type designation for mazdas version of the el84 audio output pentode. This data sheet provides information on subminiature size, axial lead mounted rectifiers for general. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Recent listings manufacturer directory get instant insight into. Saratov, 051970 this video amplifier tube seems similar to el84. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o. Diode gen purpose 50v 1a do41 online from elcodis, view and download 1n4001 pdf datasheet, diodes, rectifiers single specifications. Ordering information note 4 device packaging shipping. Sipmos powertransistor features pchannel enhancement mode avalanche rated dvdt rated 175c operating temperature maximum ratings, at t j25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a25 c a t a100 c pulsed drain current i d,pulse t a25 c avalanche energy. Pinout as in el83sv83, yet currentvoltage ratings are higher than sv83, and even higher than 6p14p, yet pa limit is set to 12w.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Datasheet pdf search site for electronic components and. Pentode for output stages of low frequency amplifiers. Oct 15, 2015 5n3011 datasheet pdf n channel mos fet renesas, 5n3011 datasheet, 5n3011 pdf, 5n3011 pinout, data, circuit, ic, manual, parts, schematic, equivalent. Each file contains the information on all updating of a onetube type also the static and dynamic curves.
Ul flammability classification rating 94v0 moisture sensitivity. Datasheet search engine for electronic components and semiconductors. All the part names for which the file 09ddj7ucy7raey5779qx3p9aht3y. Recent listings manufacturer directory get instant. On semiconductor 09ddj7ucy7raey5779qx3p9aht3y datasheet pdf. Parameters provided in datasheets and or specifications may vary in different ap plications and perfor mance may vary over. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current. Buk923755a all information provided in this document is subject to legal disclaimers. Electron devices svetlana svetlana 6n1p dual audio triode 10 20 30 40 0 100 200 300 400 500 0 vg ov2 46810 12 plate current milliamperes 14. Please see the substitutes at the top of the page for more details. Datasheet of triodes, diodes, penthodes,tetrodes, vacuum tubes. C1 1n4001 1n4007 general purpose rectifiers absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. High current density surface mount tmbs trench mos barrier. Kingtronics general purpose silicon rectifier,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Yfwdiode 1 amp rectifier 50 volts,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Sipmos powertransistor features pchannel enhancement mode avalanche rated dvdt rated 175c operating temperature pbfree lead finishing. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Panjit plastic silicon rectifiervoltage 50 to volts current 1. L45p andrew corporation cable terminated, male, uhf connector, selfflare. Externalsync power supply with universal input voltage range for monitors. Diode behaves open circuited for the current flow from cathode to anode. The 6p43pe pentode is miniature device enclosed in glass bulb and provided with a ninepin base and an indirectly heated oxidecoated cathode. When used as a pair in an ultralinear pushpull configuration with 43% distributed loading the output could reach 10 w with 0. Electron valve 6n1p analog d3 miniature double triode with separate indirectly heated cathodes is intended for amplifying lowfrequency voltage in radioelectronic devices. The pi6lc48p0401 is a 4output lvpecl synthesizer optimized to generate ethernet reference clock frequencies and is a member of pericoms hiflex family of high performance clock solutions. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or. The 6p43pe output pentode is designed for amplification of lowfrequency power. Diode is a rectifying device which conducts only from anode to cathode.
High current density surface mount tmbs trench mos barrier schottky rectifier ultra low vf 0. Cable terminated, male, uhf connector, selfflare l45p keywords. General purpose plastic rectifier vishay intertechnology. For technical questions within your region, please contact one of the following. Rohs compliant parameter symbol conditions unit continuous drain current i d t a25 c a t a100 c pulsed drain current i d,pulse t a25 c avalanche energy, single pulse e as. Integrated circuits, diodes, triacs, and other semiconductors datasheet pdf search and download site. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Diffused junction low forward voltage drop high current capability high surge current capability. Electrodetolead connection circuit diagram lead designation name of electrode 1 first triode plate 2 first triode grid. Bold designators are close or identical, italic designators are different ratings, different pinouts or different filament voltages. View 1n4001 thru 1n4007 datasheet from vishay semiconductor diodes division at digikey. This data sheet provides information on subminiature size, axial lead mounted. C 1n4001 1n4007 general purpose rectifiers glass passivated absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. At present time, these data are most complete and exact.
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